Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS

The authors demonstrate the feasibility of a p-channel quantum-well MOSFET on a Ge/sub x/Si/sub 1-x//Si heterostructure. The advantages of the enhancement-mode p-channel MOSFET device compared to GeSi MODFETs are its high impedance, channel mobility, and channel transconductance. The device shows good saturation and cutoff behaviour. A saturation transconductance of 64 mS/mm was measured for a 0.7- mu m channel device at a drain-to-source voltage of -2.5 V. The channel mobility was found to be higher than that of a similarly processed Si p-channel MOSFET.<
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