InAs nanowire GAA n-MOSFETs with 12–15 nm diameter

InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-all-around (GAA) MOSFETs with d = 12-15 nm are demonstrated. I
_on
= 314 μA/μm, and S
_sat
=68 mV/dec was achieved at V
_dd
= 0.5 V (I
_off
= 0.1 μA/μm). Highest g
_m
measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between g
_m
, R
_on
, and I
_min
are discussed.