Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT

We demonstrate high-performance (HP) High-Ge-Content (HGC) SiGe pMOS FinFETs with scaled EOT and improved junction. For the first time, SiGe FinFET EOT scaling down to ~7Å has been achieved. In addition, improved junction and series resistance has been demonstrated for HGC SiGe, by a proper choice of spacer thickness and interface-layer as well as hot ion-implant (I/I), resulting in significant R
_on
reduction down to 250 and 200Ω.μm, respectively. We report the highest “SiGe extrinsic g
_m
” reported to date with g
_{m, LIN}
=0.5mS/μm and g
_{m, SAT}
=2.7/2.5mS/μm at V
_DD
=1.0/0.5V, the highest HGC SiGe I
_on
=0.45mA/μm at fixed HP I
_off
=100nA/μm at V
_DD
=0.5V and the highest pMOS FinFET performance reported to date at sub-35nm L
_G
.