Comments, with reply, on 'A new approach to optimizing the base profile for high-speed bipolar transistors' by P.J. Van Wijnen and R.D. Gardner

The commenter claims that the fundamental approach of P.J. Van Wijnen and R.D. Gardner in the above-mentioned work (see ibid., vol.11, p.149-52, Apr. 1990) has already been proposed in L.J. Varnerin (Proc. IRE, vol.47, p.523-7, Apr. 1959). It is further claimed that the results shown in Varnerin regarding this approach to optimizing the base doping profile for maximum f/sub T/ are more general than those of Van Wijnen and Gardner, and lead to different conclusions regarding the optimum base doping profile. In a rely, the original authors admit they were unaware of the work of Varnerin, and offer some specific responses to the commenter's points.<
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