Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology

We report record low 8.4 × 10
^-10
Ω-cm
²
n-type S/D contact resistivity with laser-induced solid/liquid phase epitaxy of Si:P inside nano-scale contact trenches. Significant reduction of device resistance and resultant great gain of drain current has been demonstrated in scaled n-FinFETs with a contact length of 20 nm.