Determination of interface state density in small-geometry MOSFETs by high-low-frequency transconductance method

A method for determining the interface state profile in small-geometry MOSFETs operating in the linear region is described. By comparing the measured high- and low-frequency transconductance of the MOSFET, the interface state density is determined. In addition, using a static drain current measurement, the surface potential can be related to the gate bias without knowledge of the doping profile in the channel.<
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