Design of low inductive busbar for fast switching SiC modules verified by 3D FEM calculations and laboratory measurements

This paper explains the importance of low inductive busbar for utilizing the fast switching feature of SiC modules. A 3D FEM model of the busbar is built using Ansys Q3D extractor. The simulation results give insight into the physical behaviour of the current flow which aids in the identification of the parts of the structure that must be considered coplanar. The simulated busbar inductance is compared with analytical values and laboratory measurements, and possible reasons for deviations are discussed. Based on this knowledge, different alternative low inductive busbar designs are presented through FEM simulations along with the laboratory measurements for one of the simulated solutions, which are the main contributions of the paper.