High-Performance Lateral Nanowire InGaAs MOSFETs With Improved On-Current

We report on In
_0.85
Ga
_0.15
As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565 μA/μm at IOFF = 100 nA/μm and VDD = 0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.