Tensile-strained GeSn photodetectors with conformal nitride stressor

Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge
_1-x
Sn
_x
) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge
_1-x
Sn
_x
optoelectronic devices into the mid-infrared range.