High Throughput Air Jetting Wafer Debonding fro 3D IC and MEMS Manufacturing

Depending on the material, the currently available wafer debonding mechanisms include thermal slide, peeling, or laser ablation. These all require physical exposure to the thinned device wafer. On the other hand, typical batch debonding requires chemical diffusion through a thin gap or perforated holes in the carrier, which is usually considered high cost and with extremely low throughput. In this paper we present the AirDebond technology, which enables instant wafer debonding at room temperature with extremely low-stress air jetting. With an isolation film layer of precisely controlled low peel adhesion on its surface, the carrier stacks the device wafer with a bonding adhesive to support fabrication processing at a later time. By breaking the isolation film sealing around the carrier, we inject a stream of airflow into the interface between the film and the carrier to separate the two, thus lifting the carrier from the stack. A full process evaluation on a 200-mm wafer is presented, which includes the isolation film properties and coating specifications. To provide good mechanical support while enabling the ease of separation with air jetting, the material and adhesion properties of the isolation film were optimized and are thoroughly discussed in this paper.