Extraction of the Defect Distributions in DRAM Capacitor Using $I$ – $V$ and $C$ – $V$ Sensitivity Maps

We propose a novel spectroscopic technique that allows determining the defect density distributions within metal-electrode-sandwiched dielectric based on J-V and C-V characteristics. The technique relies on determining “sensitivity regions” corresponding to the energy-spatial coordinates of defects affecting J-V and C-V curves. This technique is then demonstrated on RuO
_x
/SrTiO
_x
/RuO
_x
metal-insulator-metal structures for DRAM capacitor applications.