Improving the light output power of DUV-LED by introducing the intrinsic last quantum barrier interlayer on the high-quality AlN template

We demonstrate that the light output power of deep ultraviolet light emitting diodes (DUV-LEDs) can be improved by introducing the intrinsic last quantum barrier interlayer on the high-quality (HQ) AlN template. With the use of HQ AlN template, the light output power of 280 nm DUV-LEDs increases about 33 % which relative to the low-quality (LQ) ones. In addition, we found the light output power can be further enhanced to 3.15 mW by inserting the intrinsic last quantum barrier interlayer.