Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment for platinum silicide application

Benefit from the good etching and patterning possibilities and its electrical properties, platinum silicide attracts renewed attention as a suitable candidate for next generation CMOS technologies recently. This work focuses on the effects of the trimethylaluminum (TMA) pretreatment on the PEALD growth of Pt film on Si substrate by using MeCpPtMe
₃
and ammonia plasma as precursors. The incubation period of ALD Pt was shortened by TMA pretreatment, and the saturation growth rate reached 0.2iÅ/cycle. X-ray diffraction showed that as-deposited films are strongly preferred orientation of the (iii) plane. The findings are important for obtaining well defined silicide films which would be used in the advanced CMOS source and drain technology.