Fabrication of graphene quantum hall resistance standard in a cryogen-table-top system

We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively easy to use and compact cryogen-free system operating at a temperature of around 3.8 K and magnetic field below 5 T. This advance in technology is due to the unique properties of epitaxial graphene on silicon carbide (SiC) which lifts the stringent requirements for quantum hall effect seen in conventional semiconductors. This paper presents the processes involved in fabrication and characterization of metrologically viable epitaxial graphene samples.