Adsorption dynamics of plasma-generated N atoms on graphene films

Graphene is leading the charge in the drive to develop the next generation of electronics and optoelectronics. The applications for which it is ideally suited as a 2D conductor have been complemented by further domains where it can function as a semiconductor or a magnetic metamaterial. These, however, depend on the availability of versatile post-growth processing techniques that can adapt it for implementation in technologies where band gap or magnetic response are necessary. The n-type doping of graphene by nitrogen atoms has been addressed as a means either for increasing electron density in graphene films or for inducing a band gap by direct incorporation or carbon replacement.