AlGaN/GaN high electron mobility transistors on Si with sputtered TiN Gate

We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I–V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al
0.26
Ga
0.74
N/GaN HEMT structure are 1.126 and 1.105 eV by I–V and I-V-T measurements, respectively. No hysteresis is observed in between forward and reverse C-V sweeps of TiN SBD. Compared to Ni/Au Schottky gate, the HEMT with TiN gate shows comparable DC output and transfer characteristics, improved OFF-state breakdown voltage (VBRoff) with very small drain current collapse, indicating the feasibility of using sputtered TiN for the fabrication of CMOS-compatible AlGaN/GaN HEMTs.