InAs/InP core-shell nanowire transistors with outstanding device performance

Summary form only given. Field-effect transistors (FETs) are fabricated using an InAs/InP core-shell nanowire (NW) with an optimized gate-all-around (GAA) gate-overlap structure. The on-state properties are largely determined by the InAs core with high electron mobility, in which electrons are confined. As for the off-state properties, observed decent subthreshold swing (SS) of 85 mV/decade is ascribed to the improved interface quality introduced by the InP shell.