Hydride vapour phase epitaxial regrowth of SI-InP: Fe on non-planar surfaces for device fabrication

The salient features of Hydride Vapour Phase Epitaxial growth of semi insulating InP:Fe on non-planar surfaces such as high growth rate, selectivity, planarity and growth behaviour insensitive either to the mesa dimension or orientation have been demonstrated. We have also exemplified its usefulness by fabricating high speed GaInAsP/InP lasers exhibiting a 3dB frequency exceeding 14 GHz.