Various structures of 1200V SiC MPS diode models and their simulated surge current behavior in comparison to measurement

In this work, the surge current behavior of 1200V SiC MPS diodes is analyzed using electro-thermal simulations. The results are compared to measurements for calibration. The isothermal surge current simulations are performed with a simplified model of the real diode structure with various sizes of pin-regions and various total model widths. The simulation result shows that smaller pin-regions trigger minority carrier injection at higher voltage drop and current density than the larger pinregions. The negative differential resistance (NDR) regime, seen in the measurement, is modeled successfully. Both, simulations and measurements show a similar behavior during a surge current event. Furthermore, the influence of the model geometry during the surge current event is investigated.