Optimization of SIMOX for VLSI by electrical characterization

A comprehensive electrical characterization study which was conducted to optimize the fabrication of SIMOX substrates for VLSI is discussed. The oxygen implantation was carried out using medium-current and high-current implanters. The wafers were annealed at 1275 degrees C and 1300 degrees C to produce high-quality, precipitate-free material. The effect of dose, the effect of multiple implantation (by sequentially implanting and annealing), and the effect of the anneal ambient gas and the capping layer during annealing were studied. MOSFETs of various geometries with a gate oxide of approximately 20 nm were fabricated by a CMOS process incorporating the addition of a thin epitaxial Si layer. A general evaluation of each transistor was conducted by studying its static characteristics. The interface states, bulk traps, and carrier generation phenomena were studied. Good-quality interfaces were obtained. Better implantation control reduced contamination and suppressed deep traps below the detection limit. Multiple implantation resulted in superior material quality. as evidenced by very long generation lifetime values (> 100 mu s).<
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