Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure

This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.