GaN High Electron Mobility Transistor Simulations With Full Wave and Hot Electron Effects

The Fermi kinetics transport model is combined with Maxwell's full wave vector field equations to accurately simulate a GaN high electron mobility transistor's measured behavior from dc up into the millimeter-wave frequency range. Explicitly including the GaN wurtzite crystal's electronic band structure and phonon scattering processes as well as electromagnetic wave effects, the simulator can capture the essential physics of this hot electron device and compare favorably with experiment without using adjustable fitting parameters. The simulator is further used to demonstrate how propagating waves and hot electrons are manifest in the measured data.