Modelling and measurement of electro-thermal interaction in RF bipolar power transistors

This paper concentrates on a systematic approach to modelling the electro-thermal interaction in RF high power bipolar transistors. This research is principally motivated by an increasing demand from designers of power transistors for predictive models. The modelling of the electro-thermal interaction is very important in power transistors, since large dissipations lead to a significant increase in temperature. The temperature increase in turn changes the electrical behavior of the transistor.