High power, high frequency gate driver for SiC-MOSFET modules

A high power, high frequency gate driver with high integration density using ASICs allowing to drive very low inductive 1200 V, 400 A SiC-MOSFET half bridge modules in both-side sinter technology (SKiN) is presented for the first time. Because of its low propagation delay, low dead times and very strong output stages of Ipeak = +40/-78 A, the driver is excellently suited to switch the 400 A MOSFETs with a switching frequency up to 200 kHz with extremely low switching losses and low overvoltages.