Doped Gd-O Based RRAM for Embedded Application

In this paper we propose a novel oxide-based RRAM stack using hygroscopic oxide, doped Gd-O, as resistive switching layer integrated in a CMOS friendly flow. Operating at 50μA, the stack features large resistive window (>x100) and superior endurance lifetime (10^12) which is to our knowledge the record lifetime for CMOS compatible RRAM devices. Detailed benchmarking between conventional oxide-based RRAM is also made throughout this study.