A new model for the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

A new insight into the post-stress interface trap (N/sub it/) generation in hot-electron stressed p-MOSFETs is presented. N/sub it/ generation is suppressed for positive oxide field but enhanced for negative oxide field. This observation provides strong support for a two-carrier model, involving the recombination between trapped electrons and inversion holes. While post-stress interface instability has generally been associated with hole trapping and hydrogen transport, our results clearly show the importance of electron traps on the long term stability of the Si-SiO/sub 2/ interface, and that the two-carrier model provides a consistent explanation for post-stress N/sub it/ generation in p-MOSFETs stressed under hot-electron injection.