Dynamics of incomplete ionized dopants and their impact on 4H/6H-SiC devices

The influence of incomplete ionization of dopants in 4H/6H-SiC on transient device behavior has been investigated numerically based on a self-consistent solution of the coupled system of Poisson's equation, the continuity equations of electrons and holes, and balance equations for each donor or acceptor level. If the rise time of a reverse bias pulse is equal or smaller than the characteristic ionization time constant, a dynamically enlarged extension of depletion regions is obtained which can result in a dynamic punchthrough (PT) within back-to-back junction configurations. The respective time constants of nitrogen (N), aluminum (Al), and boron (B) mere measured as functions of temperature in 4H- and 6H-SiC using thermal admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS). At room temperature, for instance, we obtained 60 ps/2 ps, 300 ps/10 ps, and 100 ns/100 ns for N (cubic site), Al, and B in 4H/6H-SiC, respectively. As the time constants of N and Al are small, transient incomplete ionization turns out to be negligible, at least within today's high-power device operation areas. Boron, on the other hand, influences significantly the dynamic device characteristics. In order to demonstrate the implications of these effects, numerical device simulations of a 6H-SiC double-implanted MOSFET and a 4H-SiC thyristor were performed. These simulations allow a detailed analysis of the transient device behavior and the onset of dynamic PT which strongly depends on temperature, structure parameters, and the external excitation.