Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced $I$ – $V$ Characteristic for Switching Applications

Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (W
_fin
) of 120 nm, a fin height (H
_fin
) of 250 nm, and a gate length (L
_G
) of 200 nm. The proposed device achieved very low drain leakage(I
_off
) <; 8×10
^-8
A/mm at 7 V and <;1×10
^-6
A/mm at 100 V, which is four orders of improvement over I
_OFF
of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (I
_ON
) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (f
_T
) of 21 GHz.