A Continuous Compact Model Incorporating Higher-Order Correction for Junctionless Nanowire Transistors With Arbitrary Doping Profiles

A continuous surface-field-based compact model for heavily doped junctionless nanowire transistors is developed. By constructing specific transformation variables, an algebraic relation between the surface field and potential is identified to facilitate a computationally efficient model for calculating the (long-channel) drain current from the oxide-interface boundary condition with no need of the surface-potential approach. The model accuracy at high doping levels is further improved by incorporating a second-order correction. A short-channel-effect model is also developed using the eigenfunction-expansion method to solve the 2-D Poisson's equation. A good agreement between the model prediction and TCAD simulations is observed. Finally, high model accuracy is verified by the experimental data.