Linear temperature sensors in high-voltage GaN-HEMT power devices

This work presents a high-voltage GaN-based power HEMT with a highly-linear, monolithically-integrated temperature sensor. The principle is shown and compared to other concepts. The sensor is fabricated by using a interconnect metallization without additional process steps. The performance of the sensor as well as of the power device is characterized. The 600 V power device achieves an on-state resistance of R
_ON
= 55 mO at a corresponding drain current I
_D
= 30 A and an advanced dynamic performance with a low gate charge of 20 nC.