SiGe fast-switching power diodes

SiGe is widely used in high-frequency bipolar transistors because of its low bandgap and compatibility with silicon. Here we exploit the same benefits of SiGe in a new application area, namely ultrafast power rectifiers. We have produced discrete p/sup +/(SiGe)-n/sup -/n/sup ++/ diodes with low forward voltage drop, low stored charge, and a soft recovery. The performance far exceeds that of conventional devices. These improvements are achieved without resorting to lifetime killing and thus the devices can be easily integrated into power ICs.