High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers

A self-aligned GaInP/GaAs HBT technology was used to develop a monolithic high-gain transimpedance amplifier suitable for optical communication receivers. On-wafer probe measurements revealed a gain (S/sub 21/) of 18.8 dB with a bandwidth of 13.5 GHz and input/output matching better than -8 dB. The amplifier showed a sensitivity of -15 dBm for 10 Gb/s NRZ 2/sup 7/-1 pseudo-random bit sequence with a BER of 10/sup -9/ The noise figure of the amplifier was better than 7.5 dB over the bandwidth of operation.