Fault Tolerant Non-Volatile spintronic flip-flop

With technology down scaling, static power has become one of the biggest challenges in a System-On-Chip. Normally-off computing using non-volatile sequential elements is a promising solution to address this challenge. Recently, many non-volatile shadow flip-flop architectures have been introduced in which Magnetic Tunnel Junction (MTJ) cells are employed as backup storing elements. Due to the emerging fabrication processes of magnetic layers, MTJs are more susceptible to manufacturing defects than their CMOS counterparts. Moreover, unlike memory arrays that can effectively be repaired with well-established memory repair and coding schemes, flip-flops scattered in the layout are more difficult to repair. So, without effective defect and fault tolerance for non-volatile flip-flops, the manufacturing yield will be severely affected. In this paper, we propose a Fault Tolerant Non-Volatile Latch (FTNV-L) design, in which several MTJ cells are arranged in such a way that it is resilient to various MTJ faults. Simulation results show that our proposed FTNV-L can effectively tolerate all single MTJ faults with considerably lower overhead than traditional approaches.