Performance Comparison of 0.13- $\mu \text{m}$ CMOS Low-Noise Amplifiers Designed Using Different Transistor Layouts for Millimeter-Wave Application

In this paper, two sets of low-noise amplifiers (LNAs) implemented in 0.13-μm CMOS technology using different transistor layouts are presented. For a fair comparison, the LNAs were designed using the same circuit topology and components, whereby the differences lie only on the type of transistor used, namely, the common multifinger radio frequency (RF) transistor and multifinger doublegate transistor. At 38.5 GHz, the LNA that uses the multifinger RF transistor (LNA A) attains a gain of 3.23 dB, while the LNA that uses the multifinger double-gate transistor (LNA B) attains a gain of 3.77 dB. At 41.5 GHz, LNA A obtains a gain of 2.27 dB, while LNA B obtains a gain of 2.87 dB. It can be observed that LNA B obtains a gain of at least 16% higher than LNA A at both frequencies. To the best of the authors' knowledge, this is the first LNA performance comparison using different types of transistor layouts done for millimeter-wave frequency.