Self Current Limiting MgO ReRAM Devices for Low-Power Non-Volatile Memory Applications

We report an interface engineering approach to achieve a self-compliance controlled and forming-free switching in ReRAM devices based on MgO switching layers. The proposed devices showed scalability in self-compliance current with low set and reset voltages as the interfacial layer thickness was increased. The devices showed write endurance up to 1000 cycles under self-compliance controlled switching and demonstrated potential for ultra-fast switching with low switching energies. The mechanism behind self-compliant switching is explained and supported with capacitance-voltage measurement. We believe that these devices will not require compliance current limiting transistors which will allow massive densification of these devices.