High-Performance, Solution-Processed Indium-Oxide TFTs Using Rapid Flash Lamp Annealing

In this letter, we discuss the temperature distribution of light-illuminated Si substrates with time and the successful fabrication of high-performance, solution-processed indium-oxide thin-film transistors within an annealing time of 2 min using a high-power flash lamp under ambient conditions. The precursor films are completely converted into oxide films within 30 s using flash lamp annealing (FLA). As a result, we obtained the high performance of indium-oxide TFTs with the mobility of impressive 38.9 cm
²
V
^-1
s
^-1
with the on/off ratio of ~104 for the irradiation time of 2 min and the mobility of 10.3 cm
²
V
^-1
s
^-1
with the on/off ratio of ~5 × 10
⁶
for the irradiation time of 10 s for three times, which is the highest mobility ever reported using FLA. This result will be helpful for breaking the barrier in the mass production of the next-generation semiconductors.