Heterodimensional transistor technology for attojoule electronics

Heterodimensional transistor technology using sideway depletion of the two-dimensional electron gas allows for the smooth transition from the classical to quantum regime and has demonstrated operation in the tens of attojoules switching regime. The use of the device sizes down to 10 nm and transition to the ballistic or quasi-ballistic regime should allow reducing the switching energy down to the attojoule range. Very large photo gains measured in heterodimensional transistors are related to the hole trapping in the device channel and make it possible to register optical signals in the attowatt range.