New double charge-pumping circuit for high-voltage generation

We have proposed a double charge-pumping circuit composed of PMOS transistors. The circuit does not suffer from the threshold voltage loss of the PMOS transistors. Therefore, the circuit can generate a high voltage which is proportional to the number of pumping stages. Computer simulation was applied to a 24-stage circuit. As a result, the output voltage of the circuit was as high as +20 V under the condition of V/sub DD/=+ 1 V.