Planarized SiO/sub 2/ formation by a new microwave plasma system

An improved microwave plasma system is proposed to form planarized SiO/sub 2/ interlayers for LSIs. A high planarization rate was achieved by controlling the formation of a cylindrical plasma and by adjusting the frequency applied to the substrate by which ions can be impinged onto the substrate at a maximum speed. Electric damage was decreased by using oxygen ion sputtering and by suppressing the stimulated bias voltage. These features ensure that a low-damage, planarized SiO/sub 2/ film is formed at a rate of more than 200 nm/min without a stimulated bias voltage.<
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