Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer

In this letter, the impedance behavior of Cu-SiO
₂
programmable metallization cell devices containing a thin oxide switching layer is presented. Frequency sweeps were performed during impedance spectroscopy on devices with different diameters and a range of programmed resistance states. The experimental results show that these devices can be modeled electrically as a constant capacitor connected in parallel with a variable resistor. This parallel RC equivalent model was verified with SPICE circuit simulations.