Effect of bandgap of EBL on efficiency of the p-n homojunction Si solar cell from numerical analysis

In this work, p-n homojunction Silicon solar cell with Electron Blocking Layer (EBL) on the top of the surface has been simulated and investigated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator in respect to overall performance. By changing the thickness of the p-layer and n-layer Si and bandgap of the EBL the optimum performance and efficiency has been investigated. After completing the simulation all data from AMPS-1D has been transfer to the gragh.exe (graph plotting software) software to plot most of the graph in this paper. At the thickness of 6000 nm of each p-layer and n-layer Si and 50 nm of EBL with 2.10 eV bandgap the efficiency of 26.285% has been investigated and this type of solar cell has been proposed in this paper.