Deciphering intermodulation in AlN laterally vibrating resonators

This paper reports an analytical and quantitative method that, for the first time, precisely predicts the third-order intermodulation distortion (IMD3) in AlN laterally vibrating resonators (LVRs). The simulated IMD3 reaches an excellent agreement with the measurements for a fabricated 453.4 MHz AlN LVR. This method provides an unprecedented framework for enhancing the power handling and reducing the nonlinearity of AlN LVRs to meet the requirements of RF front-end filtering.