Internal quantum efficiency of Si-drift solar cells with nonuniformly and heavily doped emitter

This work focuses to develop an analytical model of the internal quantum efficiency for a drift-field Si-solar cell with non-uniformly and heavily doped emitter region. The resulting mathematical intractability owing to the consideration of all the non-ideal effects have been resolved by employing an elegant approximation technique. The developed model shows that the drift-field solar cells have significantly higher internal quantum efficiency over the uniformly-doped Si-solar cells, particularly for high energy photons.