Electrical properties of SCT thin films prepared by RF magnetron sputtering

The (Sr/sub 0.85/Ca/sub 0.15/)TiO/sub 3/ (SCT) thin films are deposited on Pt-coated electrodes (Pt/TiN/SiO/sub 2//Si) using RF magnetron sputtering at various substrate temperatures. The structural and electrical properties of SCT thin films are influenced by substrate temperature and annealing temperature, respectively. The maximum dielectric constant of thin films is obtained by annealing at 600/spl deg/C. The dielectric constant changes almost linearly in temperature ranges of -80/spl sim/+90/spl deg/C. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 100 kHz. The dielectric constant changes almost linearly in bias voltage ranges of -5/spl sim/+5 V.