Integrated current sensing device for micro IDDQ test

A current sensing device, namely a Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement, which can be used for IDDQ testing of internal circuit blocks. The HEMOS can be manufactured and integrated in a VLSI device with the conventional CMOS process. The HEMOS is also helpful in establishing the low standby current by identifying the locations of large standby power consumption (possibly a design fault) using only a few pads.