Large on/off current ratio and low leakage current poly-Si TFTs with multichannel structure

High-performance thin-film transistors (TFTs) have been fabricated on a quartz substrate by the use of a laser-annealed multiple-strip-structure poly-Si film as a semiconductor. By recrystallization of a multiple-strip-structure poly-Si with CW-Ar laser, the carrier trap density of poly-Si can be reduced to obtain the preferential characteristics of a TFT. So, these poly-Si TFTs have n-channel enhancement-mode characteristics with threshold voltage as low as 0.4 V and large transconductance. Furthermore, a very large ON/OFF current ratio is obtained as eight orders of magnitude and the leakage current between the source and the drain is revealed to be as low as approximately 10/sup -13/ A.<
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