Single suspended InGaAs nanowire MOSFETs

We report on In
_0.85
Ga
_0.15
As NWFETs utilizing a single suspended (above the substrate) selectively grown nanowire as the channel. These devices exhibit g
_m
= 3.3 mS/μm and subthreshold slope SS = 118 mV/dec, both at V
_DS
= 0.5 V and L
_G
= 60 nm. This is the highest reported value of gm for all MOSFETs and HEMTs, as well as a strong combination of on and off performance, with Q = g
_m
/SS = 28, the highest for non-planar III-V MOSFETs.