Characterization of gain- and index-guided InGaN multiple quantum well laser diodes

We will discuss fabrication and characteristics of III-nitride based multiquantum well (MQW) laser diodes grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The device structure includes a 4 /spl mu/m GaN:Si lateral n-contact layer, 0.4 /spl mu/m AlGaN cladding layers, and a InGaN multiple quantum well active region surrounded by 0.1 /spl mu/m GaN:Si waveguide layers.