Gate-First High-Performance Germanium nMOSFET and pMOSFET Using Low Thermal Budget Ion Implantation After Germanidation Technique

The fabrication of high-performance Ge nMOSFET and pMOSFET by using the ion implantation after germanidation (IAG) technique is demonstrated. TaN/Al
₂
O
₃
/GeO
₂
is deposited as a common gate stack for the low-temperature gatefirst process. Both Ge nMOSFET and pMOSFET exhibited a high I
_ON
/I
_OFF
ratio of >10
⁴
(I
_s
), a reasonable subthreshold swing of approximately 100 mV/decade, and a low parasitic resistance <;1 kΩ-μm. The IAG technique is proved to be a low thermal budget technique for fabricating both Ge nMOSFET and pMOSFET below 400 °C.