Flexible Low-Voltage In–Zn–O Homojunction TFTs With Beeswax Gate Dielectric on Paper Substrates

Beeswax, a natural nontoxic biological material, is used as the gate dielectric of flexible low-voltage indium–zinc-oxide (IZO)-based homojunction thin-film transistors (TFTs) on paper substrates. A high specific capacitance of 5
$\mu \text{F}$
/cm
²
is measured at 1 Hz in the beeswax film due to the electric-double-layer effect. The current ON/OFF ratio, subthreshold swing, and field-effect mobility of the IZO-based TFTs on paper substrate are estimated to be
$7.6\times 10 ^{6}$
, 86 mV/decade, and 14.6 cm
²
/Vs, respectively. In addition, our results demonstrate that the flexible oxide-based TFTs on paper substrate show a good stability after 3000 times bending and 30 days aging testing. Such flexible low-voltage oxide-based homojunction TFTs have potential applications in portable paper electronics.